New SmartMatrix™ 3000XP Probe Card Lowers DRAM Test Costs by More than 25%
The DRAM industry’s migration to the 1Z and 1a nanometer process node from the previous 1X and 1Y nodes continues the trend to increased die count on wafer. As a result, full-wafer DRAM probe cards that simultaneously test every die on the wafer must keep pace. Built on FormFactor’s proven and scalable DRAM probe-card architecture, the SmartMatrix 3000XP incorporates new custom electronics to enhance signal integrity while leveraging massive tester resource sharing to enable highly parallel test at the 1Z and 1a nanometer nodes. According to market research firm IC Insights, the 1Z DRAM node will move to high volume production late this year.
“The technology built into our advanced DRAM probe cards provides customers a way to keep test costs in check, increase throughput of a test cell, and ramp to high volume production quickly,” said
The SmartMatrix 3000XP probe card’s key features include:
- Proprietary TTRE (Terminated Tester Resource Enhancement) technology, enabling parallel test of 3000 die for low test cost
- Ultra-high switch-density
ATRE(Advanced Tester Resource Enhancement) components allowing efficient component placement on existing 520mm PCB tester platforms
- Industry-leading test temperature range, from -40C to 125C, with a single probe card design for optimal operational efficiency
- Proven low-force 3D MEMS probe technology, enabling more than 150,000 probes per card at 1Z and 1α tech nodes pitch requirements. The platform supports the next generation 3D MEMS probe technology for ultra-small DRAM die
- Test clock rates up to 200 MHz at wafer sort, significantly increasing throughput and test coverage without compromise on test times
To request more information about SmartMatrix, visit www.formfactor.com/contact-sales.
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Source: FormFactor, Inc.